TY - GEN
T1 - Silicon phononic crystal for surface acoustic waves
AU - Benchabane, Sarah
AU - Khelif, Abdelkrim
AU - Daniau, William
AU - Robert, Laurent
AU - Pétrini, Valérie
AU - Assouart, Badreddine
AU - Vincent, Brice
AU - Elmazriat, Omar
AU - Krüger, Jan
AU - Laude, Vincent
PY - 2005
Y1 - 2005
N2 - The recent theoretical and experimental demonstrations of band gaps for surface acoustic waves have still enlarged the field of potential applications for phononic crystals. Direct excitation of this type of waves on the surface of a piezoelectric material, and their already extensive use in ultrasonics make them an interesting basis for phononic crystal based, acoustic signal processing devices. Thus is raised the issue of designing suitable structures for a given application. An ongoing study of the key parameters affecting the position and width of band gaps in phononic crystal is hence presented in this paper. In particular, closer interest is given to both the lattice structure and its filling fraction. Numerical examples are then given in the case of vacuum scatterers/solid matrix crystals. Eventually, a fabrication method of a silicon phononic crystal is presented, and characterization methods are proposed.
AB - The recent theoretical and experimental demonstrations of band gaps for surface acoustic waves have still enlarged the field of potential applications for phononic crystals. Direct excitation of this type of waves on the surface of a piezoelectric material, and their already extensive use in ultrasonics make them an interesting basis for phononic crystal based, acoustic signal processing devices. Thus is raised the issue of designing suitable structures for a given application. An ongoing study of the key parameters affecting the position and width of band gaps in phononic crystal is hence presented in this paper. In particular, closer interest is given to both the lattice structure and its filling fraction. Numerical examples are then given in the case of vacuum scatterers/solid matrix crystals. Eventually, a fabrication method of a silicon phononic crystal is presented, and characterization methods are proposed.
UR - http://www.scopus.com/inward/record.url?scp=33847173306&partnerID=8YFLogxK
U2 - 10.1109/ULTSYM.2005.1603001
DO - 10.1109/ULTSYM.2005.1603001
M3 - Conference contribution
AN - SCOPUS:33847173306
SN - 0780393821
SN - 9780780393820
T3 - Proceedings - IEEE Ultrasonics Symposium
SP - 922
EP - 925
BT - 2005 IEEE Ultrasonics Symposium
T2 - 2005 IEEE Ultrasonics Symposium
Y2 - 18 September 2005 through 21 September 2005
ER -