Simultaneous filling of InAs quantum dot states from the GaAs barrier under nonresonant excitation

G. Rainò*, G. Visimberga, A. Salhi, M. De Vittorio, A. Passaseo, R. Cingolani, M. De Giorgi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

The authors have performed time resolved photoluminescence measurements by upconversion technique on InAs quantum dots embedded in an InGaAsGaAs quantum well emitting at 1.3 μm at room temperature. A detailed analysis of the photoluminescence transients as a function of the excitation density and for different detection energies between the quantum dot transitions and the GaAs absorption edge shows that the intradot relaxation is slower than the direct carrier capture from the barrier states through a continuum background relaxation.

Original languageEnglish
Article number111907
JournalApplied Physics Letters
Volume90
Issue number11
DOIs
Publication statusPublished - 2007
Externally publishedYes

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