Single-frequency Sb-based distributed-feedback lasers emitting at 2.3 μm above room temperature for application in tunable diode laser absorption spectroscopy

Abdelmagid Salhi; David Barat; Daniele Romanini; Yves Rouillard; Aimeric Ouvrard; Ralph Werner; Jochen Seufert; Johannes Koeth; Aurore Vicet; Arnaud Garnache

doi:10.1364/AO.45.004957

Single-frequency Sb-based distributed-feedback lasers emitting at 2.3 μm above room temperature for application in tunable diode laser absorption spectroscopy

Abdelmagid Salhi^*, David Barat, Daniele Romanini, Yves Rouillard, Aimeric Ouvrard, Ralph Werner, Jochen Seufert, Johannes Koeth, Aurore Vicet, Arnaud Garnache

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

GaInAsSb/GaAlAsSb/GaSb distributed-feedback (DFB) laser diodes based on a type I active region were fabricated by molecular beam epitaxy at the Centre d'Electronique et de Micro-Optoélectronique de Montpellier (CEM2). The DFB processing was done by Nanoplus Nanosystems and Technologies GmbH. The devices work in the continuous-wave regime above room temperature around an emission wavelength of 2.3 μm with a side-mode suppression ratio greater than 25 dB and as great as 10 mW of output power. The laser devices are fully characterized in terms of optical and electrical properties. Their tuning properties made them adaptable to tunable diode laser absorption spectroscopy because they exhibit more than 220 GHz of continuous tuning by temperature or current. The direct absorption of CH₄is demonstrated to be possible with high spectral selectivity.

Original language	English
Pages (from-to)	4957-4965
Number of pages	9
Journal	Applied Optics
Volume	45
Issue number	20
DOIs	https://doi.org/10.1364/AO.45.004957
Publication status	Published - 10 Jul 2006
Externally published	Yes

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title = "Single-frequency Sb-based distributed-feedback lasers emitting at 2.3 μm above room temperature for application in tunable diode laser absorption spectroscopy",

abstract = "GaInAsSb/GaAlAsSb/GaSb distributed-feedback (DFB) laser diodes based on a type I active region were fabricated by molecular beam epitaxy at the Centre d'Electronique et de Micro-Opto{\'e}lectronique de Montpellier (CEM2). The DFB processing was done by Nanoplus Nanosystems and Technologies GmbH. The devices work in the continuous-wave regime above room temperature around an emission wavelength of 2.3 μm with a side-mode suppression ratio greater than 25 dB and as great as 10 mW of output power. The laser devices are fully characterized in terms of optical and electrical properties. Their tuning properties made them adaptable to tunable diode laser absorption spectroscopy because they exhibit more than 220 GHz of continuous tuning by temperature or current. The direct absorption of CH4is demonstrated to be possible with high spectral selectivity.",

author = "Abdelmagid Salhi and David Barat and Daniele Romanini and Yves Rouillard and Aimeric Ouvrard and Ralph Werner and Jochen Seufert and Johannes Koeth and Aurore Vicet and Arnaud Garnache",

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T1 - Single-frequency Sb-based distributed-feedback lasers emitting at 2.3 μm above room temperature for application in tunable diode laser absorption spectroscopy

AU - Salhi, Abdelmagid

AU - Barat, David

AU - Romanini, Daniele

AU - Rouillard, Yves

AU - Ouvrard, Aimeric

AU - Werner, Ralph

AU - Seufert, Jochen

AU - Koeth, Johannes

AU - Vicet, Aurore

AU - Garnache, Arnaud

PY - 2006/7/10

Y1 - 2006/7/10

N2 - GaInAsSb/GaAlAsSb/GaSb distributed-feedback (DFB) laser diodes based on a type I active region were fabricated by molecular beam epitaxy at the Centre d'Electronique et de Micro-Optoélectronique de Montpellier (CEM2). The DFB processing was done by Nanoplus Nanosystems and Technologies GmbH. The devices work in the continuous-wave regime above room temperature around an emission wavelength of 2.3 μm with a side-mode suppression ratio greater than 25 dB and as great as 10 mW of output power. The laser devices are fully characterized in terms of optical and electrical properties. Their tuning properties made them adaptable to tunable diode laser absorption spectroscopy because they exhibit more than 220 GHz of continuous tuning by temperature or current. The direct absorption of CH4is demonstrated to be possible with high spectral selectivity.

AB - GaInAsSb/GaAlAsSb/GaSb distributed-feedback (DFB) laser diodes based on a type I active region were fabricated by molecular beam epitaxy at the Centre d'Electronique et de Micro-Optoélectronique de Montpellier (CEM2). The DFB processing was done by Nanoplus Nanosystems and Technologies GmbH. The devices work in the continuous-wave regime above room temperature around an emission wavelength of 2.3 μm with a side-mode suppression ratio greater than 25 dB and as great as 10 mW of output power. The laser devices are fully characterized in terms of optical and electrical properties. Their tuning properties made them adaptable to tunable diode laser absorption spectroscopy because they exhibit more than 220 GHz of continuous tuning by temperature or current. The direct absorption of CH4is demonstrated to be possible with high spectral selectivity.

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Single-frequency Sb-based distributed-feedback lasers emitting at 2.3 μm above room temperature for application in tunable diode laser absorption spectroscopy

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