Stress engineering in amorphous silicon thin films

Eric Johlin; Sebastián Castro-Galnares; Amir Abdallah; Nouar Tabet; Mariana I. Bertoni; Tesleem Asafa; Jeffrey C. Grossman; Said Sayed; Tonio Buonassisi

doi:10.1109/PVSC.2011.6185874

Stress engineering in amorphous silicon thin films

Eric Johlin^*, Sebastián Castro-Galnares, Amir Abdallah, Nouar Tabet, Mariana I. Bertoni, Tesleem Asafa, Jeffrey C. Grossman, Said Sayed, Tonio Buonassisi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Low hole mobility severely limits the conversion efficiencies of amorphous silicon (a-Si) solar cells. Previously it has been proposed that carrier mobility can be improved by introducing certain types of stress into thin films. In this work we explore a range of deposition conditions allowing the formation of intrinsic stresses varying from -924 MPa compressive to 386 MPa tensile. We then discuss the origins of these stresses due to ion bombardment, presenting a model correlating our deposition parameters with our observed stress measurements. In doing so we elucidate the non-linear relationship between deposition pressure and the films intrinsic stress.

Original language	English
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	176-178
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2011.6185874
Publication status	Published - 2011
Externally published	Yes
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

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10.1109/PVSC.2011.6185874

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Johlin, E., Castro-Galnares, S., Abdallah, A., Tabet, N., Bertoni, M. I., Asafa, T., Grossman, J. C., Sayed, S., & Buonassisi, T. (2011). Stress engineering in amorphous silicon thin films. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 176-178). Article 6185874 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6185874

@inproceedings{a49f086e7dc84e7db7a83128940a2165,

title = "Stress engineering in amorphous silicon thin films",

abstract = "Low hole mobility severely limits the conversion efficiencies of amorphous silicon (a-Si) solar cells. Previously it has been proposed that carrier mobility can be improved by introducing certain types of stress into thin films. In this work we explore a range of deposition conditions allowing the formation of intrinsic stresses varying from -924 MPa compressive to 386 MPa tensile. We then discuss the origins of these stresses due to ion bombardment, presenting a model correlating our deposition parameters with our observed stress measurements. In doing so we elucidate the non-linear relationship between deposition pressure and the films intrinsic stress.",

author = "Eric Johlin and Sebasti{\'a}n Castro-Galnares and Amir Abdallah and Nouar Tabet and Bertoni, {Mariana I.} and Tesleem Asafa and Grossman, {Jeffrey C.} and Said Sayed and Tonio Buonassisi",

year = "2011",

doi = "10.1109/PVSC.2011.6185874",

language = "English",

isbn = "9781424499656",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "176--178",

booktitle = "Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011",

note = "37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

}

Johlin, E, Castro-Galnares, S, Abdallah, A, Tabet, N, Bertoni, MI, Asafa, T, Grossman, JC, Sayed, S & Buonassisi, T 2011, Stress engineering in amorphous silicon thin films. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6185874, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 176-178, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 19/06/11. https://doi.org/10.1109/PVSC.2011.6185874

Stress engineering in amorphous silicon thin films. / Johlin, Eric; Castro-Galnares, Sebastián; Abdallah, Amir et al.
Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 176-178 6185874 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Stress engineering in amorphous silicon thin films

AU - Johlin, Eric

AU - Castro-Galnares, Sebastián

AU - Abdallah, Amir

AU - Tabet, Nouar

AU - Bertoni, Mariana I.

AU - Asafa, Tesleem

AU - Grossman, Jeffrey C.

AU - Sayed, Said

AU - Buonassisi, Tonio

PY - 2011

Y1 - 2011

N2 - Low hole mobility severely limits the conversion efficiencies of amorphous silicon (a-Si) solar cells. Previously it has been proposed that carrier mobility can be improved by introducing certain types of stress into thin films. In this work we explore a range of deposition conditions allowing the formation of intrinsic stresses varying from -924 MPa compressive to 386 MPa tensile. We then discuss the origins of these stresses due to ion bombardment, presenting a model correlating our deposition parameters with our observed stress measurements. In doing so we elucidate the non-linear relationship between deposition pressure and the films intrinsic stress.

AB - Low hole mobility severely limits the conversion efficiencies of amorphous silicon (a-Si) solar cells. Previously it has been proposed that carrier mobility can be improved by introducing certain types of stress into thin films. In this work we explore a range of deposition conditions allowing the formation of intrinsic stresses varying from -924 MPa compressive to 386 MPa tensile. We then discuss the origins of these stresses due to ion bombardment, presenting a model correlating our deposition parameters with our observed stress measurements. In doing so we elucidate the non-linear relationship between deposition pressure and the films intrinsic stress.

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U2 - 10.1109/PVSC.2011.6185874

DO - 10.1109/PVSC.2011.6185874

M3 - Conference contribution

AN - SCOPUS:84861074315

SN - 9781424499656

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 176

EP - 178

BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

Y2 - 19 June 2011 through 24 June 2011

ER -

Stress engineering in amorphous silicon thin films

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