Study of defects in InxGa1-xSb bulk crystals

C. Díaz-Guerra*, M. F. Chioncel, J. Vincent, V. Bermúdez, J. Piqueras, E. Diéguez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The homogeneity and luminescence properties of undoped and Te-doped In xGa1-xSb crystals grown by the Bridgman and Vertical Feeding methods have been studied by cathodoluminescence (CL) and X-ray microanalysis in a scanning electron microscope. CL micrographs reveal the presence of non-radiative grain boundaries and dislocations in the investigated samples. Annealing at 650°C for 36 h significantly improves the structural quality and the compositional homogeneity of the Te-doped crystals. CL spectra of the ternary alloy were found to show features similar to those reported for GaSb.

Original languageEnglish
Pages (from-to)1897-1901
Number of pages5
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number6
DOIs
Publication statusPublished - 2005
Externally publishedYes

Fingerprint

Dive into the research topics of 'Study of defects in InxGa1-xSb bulk crystals'. Together they form a unique fingerprint.

Cite this