TY - JOUR
T1 - Studying room temperature RF magnetron-sputtered indium tin oxide (ITO) thin films for large scale applications
AU - Hossain, M. I.
AU - Salhi, A.
AU - Zekri, A.
AU - Abutaha, A.
AU - Tong, Y.
AU - Mansour, S.
N1 - Publisher Copyright:
© 2024 The Authors
PY - 2025/1
Y1 - 2025/1
N2 - Indium Tin Oxide (ITO) thin films are well known transparent conductive layers used for a range of areas and applications such as touchscreen technology. In general, heat treatment at > 200 degrees C is essential to optimize film properties including crystallinity, transmission, and conductivity. However, such treatment restricts the development of such films on temperature sensitive substrates. In this work, we have developed industrial scale Indium Tin Oxide (ITO) thin films on 4 inches Silicon (Si) substrate at room temperature using radio frequency magnetron sputtering to eradicate the requirement of process or post-process heat treatment. As studied, ITO films grown at lower deposition pressure (2 mTorr) with lower radio frequency (RF) power (200 W) show the best result in terms of electrical properties with topological properties. Such controlled growth of the films eventually leads to the development of industrial scale transparent conductive layers. The electrical, topological, structural, and morphological characteristics of the films were assessed through various techniques including Hall effect measurement, atomic force microscopy (AFM), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), and Transmission Electron Microscopy (TEM). The morphological data validates the development of compact, uniform, and defect-free TCO films grown at lower RF power, as verified by TEM technique. AFM measurements confirm the roughness of films is below 1 nm at lower for the deposition pressure of 2 mTorr with lower RF power of 200 W. The better conductivity of the films grown at lower deposition power without any heat treatment has been observed. These findings confirm a favorable growth procedure to develop such metal oxide films on temperature tolerant substrates, opening possibilities to develop flexible optoelectronics.
AB - Indium Tin Oxide (ITO) thin films are well known transparent conductive layers used for a range of areas and applications such as touchscreen technology. In general, heat treatment at > 200 degrees C is essential to optimize film properties including crystallinity, transmission, and conductivity. However, such treatment restricts the development of such films on temperature sensitive substrates. In this work, we have developed industrial scale Indium Tin Oxide (ITO) thin films on 4 inches Silicon (Si) substrate at room temperature using radio frequency magnetron sputtering to eradicate the requirement of process or post-process heat treatment. As studied, ITO films grown at lower deposition pressure (2 mTorr) with lower radio frequency (RF) power (200 W) show the best result in terms of electrical properties with topological properties. Such controlled growth of the films eventually leads to the development of industrial scale transparent conductive layers. The electrical, topological, structural, and morphological characteristics of the films were assessed through various techniques including Hall effect measurement, atomic force microscopy (AFM), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), and Transmission Electron Microscopy (TEM). The morphological data validates the development of compact, uniform, and defect-free TCO films grown at lower RF power, as verified by TEM technique. AFM measurements confirm the roughness of films is below 1 nm at lower for the deposition pressure of 2 mTorr with lower RF power of 200 W. The better conductivity of the films grown at lower deposition power without any heat treatment has been observed. These findings confirm a favorable growth procedure to develop such metal oxide films on temperature tolerant substrates, opening possibilities to develop flexible optoelectronics.
KW - Indium tin oxide (ITO) thin films
KW - Magnetron-sputtering
KW - Mobility
KW - Topology
KW - Transparent conductive layers
UR - http://www.scopus.com/inward/record.url?scp=85211975032&partnerID=8YFLogxK
U2 - 10.1016/j.rsurfi.2024.100383
DO - 10.1016/j.rsurfi.2024.100383
M3 - Article
AN - SCOPUS:85211975032
SN - 2666-8459
VL - 18
JO - Results in Surfaces and Interfaces
JF - Results in Surfaces and Interfaces
M1 - 100383
ER -