Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From-50°C to 180°C and a Resolution-FoM of 7.2 pJ.K<SUP>2</SUP> at 150°

Bo Wang*, Man Kay Law

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

This article presents a BJT-based CMOS temperature sensor with a wide sensing range from -50 degrees C to 180 degrees C. To effectively relax the sensor resolution requirement and conversion time over the entire temperature range to improve energy efficiency, we introduce a nonlinear subranging readout scheme together with double sampling to achieve dynamic reconfiguration of the sensor readout according to the ambient temperature. We further reduce the sensor power at high temperature by devoting the beta-cancellation circuit only for BJT biasing while applying a temperature-independent bias current for the other sensor building blocks. Implemented in 0.18-mu m CMOS with four-wire connections and switch-leakage compensation based on small BJTs, the proposed sensor chip prototype achieves a high resolution-FoM of 7.2 pJ.K-2 at 150 degrees C, while featuring a small sensing error of +/- 0.45 degrees C under a 1.5-V supply.
Original languageEnglish
Pages (from-to)3693-3703
Number of pages11
JournalIEEE Journal of Solid-State Circuits
Volume57
Issue number12
DOIs
Publication statusPublished - 1 Dec 2022

Keywords

  • Bjt
  • Calibration
  • Low-leakage switch
  • Subranging readout
  • Temperature sensor
  • double-sampling ADC

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