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Abstract
This article presents a BJT-based CMOS temperature sensor with a wide sensing range from -50 degrees C to 180 degrees C. To effectively relax the sensor resolution requirement and conversion time over the entire temperature range to improve energy efficiency, we introduce a nonlinear subranging readout scheme together with double sampling to achieve dynamic reconfiguration of the sensor readout according to the ambient temperature. We further reduce the sensor power at high temperature by devoting the beta-cancellation circuit only for BJT biasing while applying a temperature-independent bias current for the other sensor building blocks. Implemented in 0.18-mu m CMOS with four-wire connections and switch-leakage compensation based on small BJTs, the proposed sensor chip prototype achieves a high resolution-FoM of 7.2 pJ.K-2 at 150 degrees C, while featuring a small sensing error of +/- 0.45 degrees C under a 1.5-V supply.
Original language | English |
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Pages (from-to) | 3693-3703 |
Number of pages | 11 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 57 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1 Dec 2022 |
Keywords
- Bjt
- Calibration
- Low-leakage switch
- Subranging readout
- Temperature sensor
- double-sampling ADC
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Dive into the research topics of 'Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From-50°C to 180°C and a Resolution-FoM of 7.2 pJ.K<SUP>2</SUP> at 150°'. Together they form a unique fingerprint.Projects
- 1 Finished
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EX-QNRF-NPRPS-46: Endpoint Secured Multisensor Interface Chip for IoT Applications
Wang, B. (Lead Principal Investigator), Awan, M. A. (Research Assistant), Student-4, G. (Graduate Student) & Sunar, P. B. (Principal Investigator)
10/06/21 → 10/12/24
Project: Applied Research