Terahertz modulation by schottky junction in metal-semiconductor-metal microcavities

Goran Isic, Georgios Sinatkas, Dimitrios C. Zografopoulos, Borislav Vasic, Antonio Ferraro, Romeo Beccherelli, Emmanouil E. Kriezis, Milivoj Belic

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We discuss arrays of metal-semiconductor-metal cavities as electrically tunable terahertz metasurfaces. The operation of the considered device is based on reverse biasing the Schottky junction formed between top metal strips and the n-type semiconductor buried beneath. The effective Drude permittivity of the cavity array is tuned by changing the depletion layer thickness via a gate bias applied between the strips and a back metal reflector. Combining Maxwell equations for terahertz waves with a drift-diffusion model for the semiconductor carriers into a multiphysics framework, we show that the proposed modulation concept is promising for a large part of the terahertz spectrum.

Original languageEnglish
Title of host publication21st International Conference on Transparent Optical Networks, ICTON 2019
PublisherIEEE Computer Society
ISBN (Electronic)9781728127798
DOIs
Publication statusPublished - 1 Jul 2019
Externally publishedYes
Event21st International Conference on Transparent Optical Networks, ICTON 2019 - Angers, France
Duration: 9 Jul 201913 Jul 2019

Publication series

NameInternational Conference on Transparent Optical Networks
Volume2019-July
ISSN (Electronic)2162-7339

Conference

Conference21st International Conference on Transparent Optical Networks, ICTON 2019
Country/TerritoryFrance
CityAngers
Period9/07/1913/07/19

Keywords

  • Schottky junction
  • Terahertz metasurface
  • Terahertz modulation
  • Tunable metamaterial

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