The effects of bonding layer on the high-frequency dynamic response of piezoelectric augmented structures

Embedded and surface bonded piezoelectric wafers have been widely used for control, energy harvesting, and structural health monitoring applications. The basis for all these applications is the energy transfer between the piezoelectric wafer and the host structure, which takes place through the adhesive bonding layer. The characteristics of the bonding layer are found to have an important impact on the sensing and actuation capabilities of piezoelectric-based applications. In this paper, the high-frequency dynamic response of an elastic beam coupled with a piezoelectric wafer is investigated, including the bonding layer in between. A previously developed three-layer spectral element model, with high-frequency capabilities, is utilized for this purpose. Timoshenko beam and elementary rod theories are adopted to describe axial and lateral deformations in each of the three layers. A parametric study is conducted to evaluate the effects of bonding layer characteristics on the steady-state dynamic response of the coupled system, including frequency response functions and electromechanical impedance. The frequency-dependent nature of bonding layer effects is highlighted and discussed.