Understanding CIGS device performances through photoreectance spectroscopy

Antonin Moreau; David Fuertes-Marron; Irene Artacho; Ludovic Escoubas; Jean Jacques Simon; Carmen M. Ruiz; Veronica Bermudez

doi:10.1117/12.929784

Understanding CIGS device performances through photoreectance spectroscopy

Antonin Moreau^*, David Fuertes-Marron, Irene Artacho, Ludovic Escoubas, Jean Jacques Simon, Carmen M. Ruiz, Veronica Bermudez

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Cu(In_1-x,Ga_x)S₂ was studied using photoreectance spectroscopy. In this study, efforts are devoted to optimizing PR set-up for measuring CIGS grown by electrodeposition: issues such as photoluminescence perturbation, high roughness and scattering are addressed. Dual frequency photoreectance, where both probe and pump beams are modulated, is proposed here to over come the poor signal to noise ratio. Considering the low electric field regime, material parameters are extracted by employing the third derivative functional form of dielectric functions to fit data. The reliability of the technique is finally tested by measuring PR spectra on a specific 15 × 15 cm² wafer and explanations of PR line-shape evolution on this wafer are discussed.

Original language	English
Title of host publication	Thin Film Solar Technology IV
DOIs	https://doi.org/10.1117/12.929784
Publication status	Published - 2012
Externally published	Yes
Event	Thin Film Solar Technology IV - San Diego, CA, United States Duration: 12 Aug 2013 → 13 Aug 2013

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8470
ISSN (Print)	0277-786X

Conference

Conference	Thin Film Solar Technology IV
Country/Territory	United States
City	San Diego, CA
Period	12/08/13 → 13/08/13

Keywords

CuInGaS
Dual frequency
Electrodeposition
Photoreectance
Solar cell

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10.1117/12.929784

Cite this

@inproceedings{7ae83ff9bb324c419c4ef28c3d7708b3,

title = "Understanding CIGS device performances through photoreectance spectroscopy",

abstract = "Cu(In1-x,Gax)S2 was studied using photoreectance spectroscopy. In this study, efforts are devoted to optimizing PR set-up for measuring CIGS grown by electrodeposition: issues such as photoluminescence perturbation, high roughness and scattering are addressed. Dual frequency photoreectance, where both probe and pump beams are modulated, is proposed here to over come the poor signal to noise ratio. Considering the low electric field regime, material parameters are extracted by employing the third derivative functional form of dielectric functions to fit data. The reliability of the technique is finally tested by measuring PR spectra on a specific 15 × 15 cm2 wafer and explanations of PR line-shape evolution on this wafer are discussed.",

keywords = "CuInGaS, Dual frequency, Electrodeposition, Photoreectance, Solar cell",

author = "Antonin Moreau and David Fuertes-Marron and Irene Artacho and Ludovic Escoubas and Simon, {Jean Jacques} and Ruiz, {Carmen M.} and Veronica Bermudez",

year = "2012",

doi = "10.1117/12.929784",

language = "English",

isbn = "9780819491879",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Thin Film Solar Technology IV",

note = "Thin Film Solar Technology IV ; Conference date: 12-08-2013 Through 13-08-2013",

}

Moreau, A, Fuertes-Marron, D, Artacho, I, Escoubas, L, Simon, JJ, Ruiz, CM & Bermudez, V 2012, Understanding CIGS device performances through photoreectance spectroscopy. in Thin Film Solar Technology IV., 84700L, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8470, Thin Film Solar Technology IV, San Diego, CA, United States, 12/08/13. https://doi.org/10.1117/12.929784

Understanding CIGS device performances through photoreectance spectroscopy. / Moreau, Antonin; Fuertes-Marron, David; Artacho, Irene et al.
Thin Film Solar Technology IV. 2012. 84700L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8470).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Understanding CIGS device performances through photoreectance spectroscopy

AU - Moreau, Antonin

AU - Fuertes-Marron, David

AU - Artacho, Irene

AU - Escoubas, Ludovic

AU - Simon, Jean Jacques

AU - Ruiz, Carmen M.

AU - Bermudez, Veronica

PY - 2012

Y1 - 2012

N2 - Cu(In1-x,Gax)S2 was studied using photoreectance spectroscopy. In this study, efforts are devoted to optimizing PR set-up for measuring CIGS grown by electrodeposition: issues such as photoluminescence perturbation, high roughness and scattering are addressed. Dual frequency photoreectance, where both probe and pump beams are modulated, is proposed here to over come the poor signal to noise ratio. Considering the low electric field regime, material parameters are extracted by employing the third derivative functional form of dielectric functions to fit data. The reliability of the technique is finally tested by measuring PR spectra on a specific 15 × 15 cm2 wafer and explanations of PR line-shape evolution on this wafer are discussed.

AB - Cu(In1-x,Gax)S2 was studied using photoreectance spectroscopy. In this study, efforts are devoted to optimizing PR set-up for measuring CIGS grown by electrodeposition: issues such as photoluminescence perturbation, high roughness and scattering are addressed. Dual frequency photoreectance, where both probe and pump beams are modulated, is proposed here to over come the poor signal to noise ratio. Considering the low electric field regime, material parameters are extracted by employing the third derivative functional form of dielectric functions to fit data. The reliability of the technique is finally tested by measuring PR spectra on a specific 15 × 15 cm2 wafer and explanations of PR line-shape evolution on this wafer are discussed.

KW - CuInGaS

KW - Dual frequency

KW - Electrodeposition

KW - Photoreectance

KW - Solar cell

UR - http://www.scopus.com/inward/record.url?scp=84872857680&partnerID=8YFLogxK

U2 - 10.1117/12.929784

DO - 10.1117/12.929784

M3 - Conference contribution

AN - SCOPUS:84872857680

SN - 9780819491879

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Thin Film Solar Technology IV

T2 - Thin Film Solar Technology IV

Y2 - 12 August 2013 through 13 August 2013

ER -

Understanding CIGS device performances through photoreectance spectroscopy

Abstract

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Conference

Keywords

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