TY - JOUR
T1 - Visualizing transport in thiazole flanked isoindigo-based donor-acceptor polymer field-effect transistors
AU - Barron, John
AU - Attar, Salahuddin
AU - Bhattacharya, Payal
AU - Yu, Ping
AU - Al-Hashimi, Mohammed
AU - Guha, Suchismita
N1 - Publisher Copyright:
© 2022 The Royal Society of Chemistry.
PY - 2022/9/9
Y1 - 2022/9/9
N2 - Fluorination of donor-acceptor copolymers has been one strategy towards enhancing polymer coplanarity, increasing crystallinity, and improving charge transport mechanisms in organic devices. Herein, we report on the synthesis of thiazole flanked fluorinated isoindigo (IID) copolymers and demonstrate their field-effect transistor (FET) properties. The selenophene-substituted IID shows improved performance over the thiophene units. Different FET geometries were fabricated and tested. Top-gate FETs with varying dielectric layers showed n-type transport with electron carrier mobilities of the order of 10−2 cm2 V−1 s−1 and on/off ratio of 105. Along with improving the electronic properties, fluorination is an effective means of enhancing the nonlinear optical properties. We exploit this feature by observing the semiconductor-dielectric polarization induced by the applied electric field and the injected carriers. Time-resolved electric field-induced second harmonic generation method is used to visualize the carrier motion within the FET channel region, which gives an alternate estimate of the electron carrier mobility, free from contact resistance issues.
AB - Fluorination of donor-acceptor copolymers has been one strategy towards enhancing polymer coplanarity, increasing crystallinity, and improving charge transport mechanisms in organic devices. Herein, we report on the synthesis of thiazole flanked fluorinated isoindigo (IID) copolymers and demonstrate their field-effect transistor (FET) properties. The selenophene-substituted IID shows improved performance over the thiophene units. Different FET geometries were fabricated and tested. Top-gate FETs with varying dielectric layers showed n-type transport with electron carrier mobilities of the order of 10−2 cm2 V−1 s−1 and on/off ratio of 105. Along with improving the electronic properties, fluorination is an effective means of enhancing the nonlinear optical properties. We exploit this feature by observing the semiconductor-dielectric polarization induced by the applied electric field and the injected carriers. Time-resolved electric field-induced second harmonic generation method is used to visualize the carrier motion within the FET channel region, which gives an alternate estimate of the electron carrier mobility, free from contact resistance issues.
UR - http://www.scopus.com/inward/record.url?scp=85139963700&partnerID=8YFLogxK
U2 - 10.1039/d2tc02748h
DO - 10.1039/d2tc02748h
M3 - Article
AN - SCOPUS:85139963700
SN - 2050-7526
VL - 10
SP - 14653
EP - 14660
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 39
ER -