Wide-bandgap CuIn_1-xAl_xSe₂ thin films deposited on transparent conducting oxides

Keyphrases

• Wide Bandgap 100%
• Chalcopyrite Structure 50%
• Two-stage Process 50%
• Metallic Precursor 50%
• Selenization 50%
• Wide Bandgap Materials 50%
• Tandem Cell 50%
• Al Addition 50%
• Tin-doped Indium Oxide 50%
• Composition Analysis 50%
• AZO Substrate 50%
• X-ray Diffractogram 50%
• Precursor Layer 50%
• Band Gap Energy 50%

Material Science

• Transparent Conducting Oxide 100%
• X-Ray Diffractogram 33%

Engineering

• Aluminium-Doped Zinc Oxide 33%
• Process Stage 33%
• Tandem Cell 33%
• Deposited Material 33%